VF60100C www.vishay.com vishay general semiconductor revision: 17-aug-15 1 document number: 89394 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual high-voltage trench mos barrier schottky rectifier ultra low v f = 0.36 v at i f = 5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency converters, switching power supplies, freewheeling diod es, or-ing diode, dc/dc converters and reverse battery protection. mechanical data case: ito-220ab ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 2 x 30 a v rrm 100 v i fsm 320 a v f at i f = 30 a 0.66 v t j max. 150 c package ito-220ab diode variation dual common cathode tmbs ? ito-220ab 1 2 3 pin 1 pin 2 pin 3 VF60100C maximum ratings (t a = 25 c unless otherwise noted) parameter symbol VF60100C unit maximum repetitive pe ak reverse voltage v rrm 100 v maximum average forward rectified current (fig. 1) per device i f(av) 60 a per diode 30 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on ra ted load per diode i fsm 320 a isolation voltage from termin al to heatsink t = 1 min v ac 1500 v voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg -40 to +150 c
VF60100C www.vishay.com vishay general semiconductor revision: 17-aug-15 2 document number: 89394 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditio ns symbol typ. max. unit instantaneous forward voltage per diode i f = 5 a t a = 25 c v f (1) 0.45 - v i f = 10 a 0.52 - i f = 15 a 0.58 0.63 i f = 20 a 0.63 - i f = 30 a 0.73 0.79 i f = 5 a t a = 125 c 0.36 - i f = 10 a 0.45 - i f = 15 a 0.53 0.58 i f = 20 a 0.58 - i f = 30 a 0.66 0.70 reverse current at rated v r per diode v r = 80 v t a = 25 c i r (2) 24 500 a t a = 125 c 13 20 ma v r = 100 v t a = 25 c 65 1000 a t a = 125 c 30 - ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol VF60100C unit typical thermal resistance per diode r ? jc 5.0 c/w per device 3.5 ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode ito-220ab VF60100C-m3/4w 1.76 4w 50/tube tube
VF60100C www.vishay.com vishay general semiconductor revision: 17-aug-15 3 document number: 89394 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics per diode fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical junction capacitance per diode dc forward current (a) case temperature (c) 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 dc current, per diode 35 d = 0.1 d = 0.3 d = 0.5 d = 0.8 d = 0.2 d = 1.0 0 0 5 10 15 20 25 30 35 5 10 15 20 25 30 average power loss (w) ave rage forwa rd current (a) d = t p /t t p t t a = 150 c t a = 100 c t a = 25 c t a = 125 c instan taneous forward current (a ) instantaneous forward voltage (v) 0 0.2 0.4 0.6 0.8 1 100 10 1 0.1 t a = 150 c t a = 125 c t a = 100 c t a = 25 c 10 20 30 40 50 60 70 80 90 100 percent of rated peak reverse voltage (%) 1000 100 10 1 0.001 0.1 0.01 instantaneous reverse current (ma) 0.1 1 10 100 10 000 1000 100 reverse voltage (v) junction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mv p-p
VF60100C www.vishay.com vishay general semiconductor revision: 17-aug-15 4 document number: 89394 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) ito-220ab 0.076 (1.93) ref. 45 ref. pi n 3 2 1 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.580 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4.85) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.08) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4.83) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 (8.89) 0.330 (8.38)
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